DB3M [BL Galaxy Electrical]
SILICON BIDIRECTIONAL DIACS; 硅双向DIACS
| 型号： | DB3M |
| 厂家： | 
BL Galaxy Electrical |
| 描述： | SILICON BIDIRECTIONAL DIACS |
| 文件： | 总2页 (文件大小：70K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
GALAXY ELECTRICAL
DB3M.DB4M
BL
VOLTAGE RANGE: 28-45 V
SILICON BIDIRECTIONAL DIACS
FEATURES
The three layer,two termnal,hermetically sealed diacs
are designed specifically for triggering thyristors.
They demonstrate low break over current at break
over voltage as they withstand peak pulse current,
The breakover symmetry is within three volts(DB6).
These diacs are intended for use in thyrisitors
phase control,circuits for lamp dimming,universal
motor speed control,and heat control.
MINI-MELF
Cathode indification
±
0.4 0.1
3.4 +0.3
-0.1
Dimensions in millimeters
ABSOLUTE RATINGS
Parameters
Symbols
DB3M,DB4M
UNITS
Power dissipation on printed
TA=50oC
Pc
150.0
2.0
mW
A
Repetitive peak on-state
current
tp=20
f=120Hz
S
ITRM
oC
oC
Operating junction temperature
Storage temperature
TJ
-40--- +125
-40--- +125
TSTG
ELECTRICAL CHARACTERISTICS
Parameters
Test Conditions
DB3M
DB4M
UNITS
V
Min
Typ
Max
28
32
36
35
40
45
C=22nf(NOTE2)
See FIG.1
Breakover voltage (NOTE1)
VBO
I+VBO I-
I-VBOI
C=22nf(NOTE2)
See FIG.1
±3.0
V
V
Breakover voltage symmetry
Max
Min
I=(IBO to IF=10mA)
See FIG.1
Dynamic breakover voltage (NOTE1)
Output voltage (NOTE1)
I± VI
5.0
5.0
See FIG.2
Vo
IBO
tr
Min
Max
Typ
Max
V
A
S
A
C=22nf(NOTE2)
See FIG.3
100.0
1.5
Breakover current (NOTE1)
Rise time (NOTE1)
VR=0.5 VBO
See FIG.1
10.0
Leakage current (NOTE1)
IR
www.galaxycn.com
NOTE: 1. Electrical characteristics applicable in both forw ard and reverse dirctions.
2. Connected in parallel w ith the devices
Document Number 0283006
1.
BLGALAXY ELECTRICAL
RATINGS AND CHARACTERISTIC CURVES
DB3M.DB4M
FIG.1--VOLTAGE-CURRENT CHARACTERISTIC CURVE
FIG.2--TEST CIRCUIT FOR OUTPUT VOLTAGE
+IF
10mA
10KΩ
500KΩ
D.U.T
IBO
IB
220V
60Hz
R=20Ω
Vo
-V
+V
0.1µ F
0.5VBO
V
VBO
-IF
FIG.4--POWER DISSIPATION VERSUS AMBIENT
TEMPERATURE (MAXIMUM VALUES)
FIG.3-- TEST CIRCUIT SEE FIG.2 ADJUST R FOR IP=0.5A
P(mW)
160
140
120
90%
IP
100
80
60
40
10%
20
Tamb( ℃ )
tr
0
0
10 20 30 40 50 60 70 80 90 100 110 120 130
FIG.5--RELATIVE VARIATION OF VBO VERSUS JUNCTION
TEMPERATURE(TYPICAL VALUES)
FIG.6--PEAK PULSEE CURRENT VERENT VERSUS
PULSE DURATION(MAXIMUM VALUES)
ITRM(A)
VBO(TJ)
VBO(TJ=25
)
1.08
1.06
2
1
f=100Hz
TJ(
)
TJ initial=25℃
1.04
0.1
tp(µ s)
1.02
1.00
0.01
10
100
1000
10000
25
50
75
100
125
www.galaxycn.com
BLGALAXY ELECTRICAL
Document Number 0283006
2.
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